JPH0587187B2 - - Google Patents
Info
- Publication number
- JPH0587187B2 JPH0587187B2 JP62240013A JP24001387A JPH0587187B2 JP H0587187 B2 JPH0587187 B2 JP H0587187B2 JP 62240013 A JP62240013 A JP 62240013A JP 24001387 A JP24001387 A JP 24001387A JP H0587187 B2 JPH0587187 B2 JP H0587187B2
- Authority
- JP
- Japan
- Prior art keywords
- type diffusion
- diffusion layer
- transistor
- type
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000003068 static effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010008 shearing Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240013A JPS6481353A (en) | 1987-09-24 | 1987-09-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240013A JPS6481353A (en) | 1987-09-24 | 1987-09-24 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6481353A JPS6481353A (en) | 1989-03-27 |
| JPH0587187B2 true JPH0587187B2 (en]) | 1993-12-15 |
Family
ID=17053162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62240013A Granted JPS6481353A (en) | 1987-09-24 | 1987-09-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6481353A (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5237198A (en) * | 1989-12-16 | 1993-08-17 | Samsung Electronics Co., Ltd. | Lateral PNP transistor using a latch voltage of NPN transistor |
-
1987
- 1987-09-24 JP JP62240013A patent/JPS6481353A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6481353A (en) | 1989-03-27 |
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